Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films
Abstract
In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 - 300 K and used to determine the temperature dependence of the zero-phononline full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.
- Publication:
-
Journal of Electrical Engineering
- Pub Date:
- January 2017
- DOI:
- 10.1515/jee-2017-0010
- Bibcode:
- 2017JEE....68...74D
- Keywords:
-
- silicon vacancy centres;
- photoluminescence;
- low temperature;
- diamond;
- CVD