On-chip unstable resonator cavity GaSb-based quantum well lasers
Abstract
The focused ion beam milling tool was used to convert a GaSb-based broad area gain-guided quantum well laser device with a standard Fabry-Pérot cavity into one with an unstable resonator cavity. A cylindrical mirror was formed at the back facet of the broad area device emitting near 2 μm. Compared to the Fabry-Pérot cavity device, where the coherency of the beam is severely disrupted by filamentation, the unstable resonator cavity device exhibits an ∼2× diffraction limited beam. The relatively small penalty in slope efficiency demonstrates that a much higher brightness can be reached in this class of broad area devices.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- April 2017
- DOI:
- 10.1063/1.4980028
- Bibcode:
- 2017JAP...121n3101Y