The investigation of Ga-doped ZnO as an interlayer for ohmic contact to Cd1-xZnxTe films
Abstract
In this work, high quality Cd1-xZnxTe films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd1-xZnxTe films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd1-xZnxTe structure. The results show a low contact resistivity of 0.37 Ω cm2 for Au/GZO contacts on Cd1-xZnxTe films. Cd1-xZnxTe film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60 KeV 241Am γ-ray source for the first time.
- Publication:
-
Applied Surface Science
- Pub Date:
- December 2017
- DOI:
- 10.1016/j.apsusc.2017.07.028
- Bibcode:
- 2017ApSS..425..176S
- Keywords:
-
- Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te;
- ZnO;
- Circular transmission line model;
- Radiation detector