Long-lived spin polarization in n-doped MoSe2 monolayers
Abstract
Transition metal dichalcogenide monolayers are highly interesting for potential valleytronic applications due to the coupling of spin and valley degrees of freedom and valley-selective excitonic transitions. However, ultrafast recombination of excitons in these materials poses a natural limit for applications so that a transfer of polarization to resident carriers is highly advantageous. Here, we study the low-temperature spin-valley dynamics in nominally undoped and n-doped MoSe2 monolayers using time-resolved Kerr rotation. In the n-doped MoSe2, we find a long-lived component of the Kerr signal which we attribute to the spin polarization of resident carriers. This component is absent in the nominally undoped MoSe2. The long-lived spin polarization is stable under applied in-plane magnetic fields. Spatially resolved measurements allow us to determine an upper boundary for the electron spin diffusion constant in MoSe2.
- Publication:
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Applied Physics Letters
- Pub Date:
- August 2017
- DOI:
- 10.1063/1.4987000
- arXiv:
- arXiv:1706.01802
- Bibcode:
- 2017ApPhL.111h2404S
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett. 111, 082404 (2017)