Electrical and Photoconductivity study on few layers ReSe2
Abstract
Transition metal dichalcogenides (TMDs) have emerged as attractive materials for electronic and optoelectronic device applications due to their tunable band gap as a function of layers and easier to produce single atomic layer form, which could be potential pathways beyond CMOS technologies. Among the TMDs semiconductors, extensive research has been conducted on few compounds such as MoS2, WS2, and WSe2 focusing on electrical and optical properties of single-to-few atomic layers. These compounds show direct band gap transition when exfoliated to single layer from bulk crystals. However, there are other layered materials such as ReS2, ReSe2, InSe, etc. are recently reported displays direct band gap irrespective to the number of layers, makes promising application in optoelectronics. Here, we present an intrinsic electrical and photoconductivity study on less studied ReSe2 compound, mechanically exfoliated on to the Si/SiO2 substrate. The field-effect mobility at room temperature of few-layered ReSe2 device is 10cm2/Vs. Hopefully we will also present the detail electrical transport properties of ReSe2 field-effect transistors as a function of temperature.
We acknowledge US Army Research Office through the MURI Grant W911NF-11-10362. NHMFL is supported by NSF.- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2017
- Bibcode:
- 2017APS..MARH33010P