Si nanostructures induced by ion-beam impact on SiO2
Abstract
Silicon oxide films are used in many fields due to its optical and electrical properties. One of its main applications includes the microelectronics industry, where the silicon suboxide (SiOx) can be used as a precursor for synthesis of silicon nanocrystals. Here we explore a synthesis route for these nanocrystals based on the impact of low energy ions in thin films of silicon dioxide. As the development of techniques for synthesis of nanostructures is continuous, it also becomes necessary to develop, in parallel, nanoscale characterization techniques compatible with nanometric spatial resolution. The combination of synchrotron radiation and Atomic Force Microscopy allows topographic imaging combined with nanometric infrared imaging and the measurement of IR spectra on chosen points on the images, which provide information about the vibrational modes of the solid. Our sample is a 50 nm thick silicon dioxide layer grown on top of a Si bulk. In this case we irradiate the thin film with a beam of Cs + ions. It is possible to study the introduction of defects and disorder in the film by analyzing the changes in the normal modes of vibration of Si-O-Si in the film and to observe the nanostructure synthesis of Si nanocrystals with heights of the order of 70 nm.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2017
- Bibcode:
- 2017APS..MARH28004F