A study on the effect of Sn concentration on the transport properties of epitaxial Bi2-δSnδTe3 thin films
Abstract
We have performed a systematic study on the transport properties of epitaxial Bi2-δSnδTe3 thin films with varying δ from the underdoped to the overdoped region. By compensating unintentional carriers doped by defects in Bi2Te3, the bulk conductivity has been found to be highly suppressed with a very small amount of Sn resulting in the insulating behavior of resistivity at high temperatures. Furthermore, from the temperature- and magnetic field-dependence of the longitudinal resistance and the Hall resistance, we have separately characterized the surface state showing that the phase-relaxation length of the surface state of Sn-doped Bi2Te3 films increases up to 250 nm at 1.8 K, about three times of that of the undoped Bi2Te3 film. And, finally, the magnetoresistance ratio (MR) of the Sn-doped Bi2Te3 films has been found to have a peak at a certain temperature, which is attributed to the carrier compensation similar to the semimetals.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2017
- Bibcode:
- 2017APS..MAR.S3006L