Synthesis of galium nitride thin films using sol-gel dip coating method
Abstract
In this research, gallium nitride (GaN) thin film were grown on silicon (Si) substrate by a low-cost sol-gel dip coating deposition method. The GaN precursor solution was prepared using gallium (III) nitrate hydrate powder, ethanol and diethanolamine as a starting material, solvent and surfactant respectively. The structural, morphological and optical characteristics of the deposited GaN thin film were investigated. Field-emission scanning electron microscopy observations showed that crack free and dense grains GaN thin films were formed. Energy dispersive X-ray analysis confirmed that the oxygen content in the deposited films was low. X-ray diffraction results revealed that deposited GaN thin films have hexagonal wurtzite structure.
- Publication:
-
Advanced Materials for Sustainability and Growth
- Pub Date:
- December 2017
- DOI:
- 10.1063/1.5010457
- Bibcode:
- 2017AIPC.1901b0020H