In situ detection of the phase transformations in silicon during nanoindentation
Abstract
A method for the in situ detection of the phase transformations of silicon Si-I → Si-II → Si-XII/Si-III during indentation is developed. The method is based on the simultaneous detection of a P- h diagram and the electrical resistance during indentation into a narrow (≈2 μm) gap between metallic films deposited on the silicon surface. The sensitivity of the method makes it possible to resolve an increase in the Si-II silicon volume during indentation.
- Publication:
-
Russian Metallurgy
- Pub Date:
- October 2016
- DOI:
- 10.1134/S0036029516100037
- Bibcode:
- 2016RuMet2016..942D
- Keywords:
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- silicon;
- indentation;
- phase transformations;
- metallized phase