Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy
Abstract
- Publication:
-
Physica Status Solidi B Basic Research
- Pub Date:
- November 2016
- DOI:
- 10.1002/pssb.201600364
- Bibcode:
- 2016PSSBR.253.2225N