Electrical control of the valley Hall effect in bilayer MoS<SUB>2</SUB> transistors

doi:10.1038/nnano.2015.337

Electrical control of the valley Hall effect in bilayer MoS₂ transistors

The valley Hall effect in bilayer MoS₂ transistors can be controlled using a gate voltage and the induced valley polarization imaged with Kerr microscopy.

Publication:

Nature Nanotechnology

Pub Date:

May 2016

DOI:

10.1038/nnano.2015.337

arXiv:

arXiv:1508.03068

Bibcode:

2016NatNa..11..421L

Keywords:

Condensed Matter - Mesoscale and Nanoscale Physics

E-Print:

10 pages, 4 figures

NASA/ADS

Electrical control of the valley Hall effect in bilayer MoS2 transistors

Abstract

Electrical control of the valley Hall effect in bilayer MoS₂ transistors