High-performance MOS-capacitor-type Si optical modulator and surface-illumination-type Ge photodetector for optical interconnection
Abstract
We developed a high-speed and high efficiency MOS-capacitor-type Si optical modulator (Si-MOD). We designed the optimum structure and demonstrated a very high modulation efficiency (V π L) of 0.28-0.30 V cm at 1.3 µm wavelength. We also demonstrated a high speed of 25 Gbps for the Si-MOD integrated with a Si-waveguide-coupled Ge photodetector (Ge-PD), and also high-speed operation of 15 Gbps with a CMOS driver. We further demonstrated a high modulation efficiency of 0.16 V cm with a low optical loss (α) of 3.5 dB/mm, using a carrier accumulation mode. In this case, the figure of merit (FOM) of αV π L is less than 7 dBV. We demonstrated a high-speed operation of 25 Gbps for the Si-MOD with a short phase shifter of 60 µm length. We also demonstrated a surface-illumination-type pin Ge-PD, which shows both a high bandwidth of 24 GHz and a high-efficiency of 0.8-0.9 A/W in the case of 30 µm Ge diameter.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- April 2016
- DOI:
- 10.7567/JJAP.55.04EC01
- Bibcode:
- 2016JaJAP..55dEC01F