300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology
Abstract
This paper reports the first demonstration of 300 mm In0.53Ga0.47As-on-insulator (InGaAs-OI) substrates. The use of direct wafer bonding and the Smart Cut™ technology lead to the transfer of high quality InGaAs layer on large Si wafer size (300 mm) at low effective cost, taking into account the reclaim of the III-V on Si donor substrate. The optimization of the three key building blocks of this technology is detailed. (1) The III-V epitaxial growth on 300 mm Si wafers has been optimized to decrease the defect density. (2) For the first time, hydrogen-induced thermal splitting is made inside the indium phosphide (InP) epitaxial layer and a wide implantation condition ranges is observed on the contrary to bulk InP. (3) Finally a specific direct wafer bonding with alumina oxide has been chosen to avoid outgas diffusion at the alumina oxide/III-V compound interface.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- April 2016
- DOI:
- 10.7567/JJAP.55.04EB10
- Bibcode:
- 2016JaJAP..55dEB10W