Electronic properties of unstrained unrelaxed narrow gap InAs x Sb1-x alloys
Abstract
The electronic properties of unstrained unrelaxed InAs x Sb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: E g = 0.10 eV, m* = 0.0082 m 0 at 4.2 K. The bowing coefficient of 0.038 m 0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.
- Publication:
-
Journal of Physics D Applied Physics
- Pub Date:
- March 2016
- DOI:
- 10.1088/0022-3727/49/10/105101
- Bibcode:
- 2016JPhD...49j5101S