Development and fabrication of a very High-g sensor for very high impact applications
Abstract
In this paper we present the first time our development work of a family of silicon on insulator (SOI)- based piezoresistive MEMS very high G sensors for measurement of accelerations up to 60.000 g. Two sensors have been realized, one for 20.000g and one for 60.000g.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- October 2016
- DOI:
- 10.1088/1742-6596/757/1/012016
- Bibcode:
- 2016JPhCS.757a2016M