InGaN/GaN heterostructures with lateral confinement for light emitting diodes
Abstract
InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about 80o. EL spectrum has maximum at 460 nm.
- Publication:
-
Journal of Physics Conference Series
- Pub Date:
- August 2016
- DOI:
- 10.1088/1742-6596/741/1/012083
- Bibcode:
- 2016JPhCS.741a2083K