Sulfurization Study on the Ag and Ag-Pd Reflectors for GaN-Based LEDs

In this study, we have established a sulfurization resistance test, which is an immersion process in 0.01 M Na₂S solution for 10 min. By using this process, we found that the sulfurized Ag reflector drops significantly over 52%. However, the Ag-Pd alloy reflector does not drop as much as the Ag reflector. The minimum reduction rate (around 20%) occurs at the Ag-Pd reflector with a Pd content of 3.72 at.%. It means that there is an optimal surface Pd content (around 3.72 at.%) for the reduction in reflectivity. Above, two effects of Pd alloying atoms on the sulfurization of the surface Ag atoms have been drawn, which are (1) chemical-state change effect and (2) surface microstructure effect. We found that the chemical-state change effect retards the sulfurization of the surface Ag atoms, but the surface microstructure effect (increase in Ag (111) plane) promotes the sulfurization of the surface Ag atoms. Here, we believe that these two opposite effects explain that there is an optimal Pd content on the Ag-Pd surface for the resistance of the sulfurization on the Ag surface.