Magneto-transport and domain wall scattering in epitaxy L10 MnAl thin film

This work demonstrated two different kinds of magneto-transport behaviors in epitaxial L1₀ MnAl film as a function of temperature. The magneto-resistance ratio (MR) was negative and exhibited evident enhancement in the resistivity at coercive fields above 175 K. The MR enhancement was attributed to the increase in the magnetic domain walls based on the quantitative correlation between the domain density and the resistivity. Below 175 K, the MR was positive and showed a quadratic dependence on the external magnetic field, which implied that the MR was dominated by Lorentz effects.