Comment on ``Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening''
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 2016
- DOI:
- 10.1109/TED.2016.2621158
- Bibcode:
- 2016ITED...63.5077P