0.1- mu text{m} InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 2016
- DOI:
- 10.1109/TED.2016.2579160
- Bibcode:
- 2016ITED...63.3076X