Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3as Gate Dielectric
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 2016
- DOI:
- 10.1109/TED.2016.2564301
- Bibcode:
- 2016ITED...63.2729G