Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 2016
- DOI:
- 10.1109/TED.2015.2509964
- Bibcode:
- 2016ITED...63..620O