HfO 2 -based ferroelectric modulator of terahertz waves with graphene metamaterial
Abstract
Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology.
Project supported by the National Natural Science Foundation of China (Grant No. 11374182).- Publication:
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Chinese Physics B
- Pub Date:
- October 2016
- DOI:
- 10.1088/1674-1056/25/10/106803
- Bibcode:
- 2016ChPhB..25j6803J