Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots
Abstract
Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.
- Publication:
-
Applied Surface Science
- Pub Date:
- November 2016
- DOI:
- 10.1016/j.apsusc.2016.06.047
- Bibcode:
- 2016ApSS..387.1002M
- Keywords:
-
- Silicon quantum dots (Si QDs);
- Silicon carbide;
- Multilayers;
- Plasma enhanced chemical vapor deposition;
- Transverse current transport;
- Solar cell