Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique
Abstract
ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.
- Publication:
-
Applied Surface Science
- Pub Date:
- March 2016
- DOI:
- 10.1016/j.apsusc.2016.01.104
- Bibcode:
- 2016ApSS..366..348L
- Keywords:
-
- ZnO thin films;
- Electrodeposition;
- Photoluminescence;
- Heterojunction;
- Rectifying properties