Two-dimensional transition metal dichalcogenides based magnetic tunneling junctions
Abstract
The transport properties of magnetic tunneling junctions (MTJ) using two-dimensional (2D) transition metal dichalcogenide monolayers MX2 (M =Mo, W; X =S, Se) as tunnel layer are reported. The 2D MX2 were grown using chemical vapor deposition. As-grown 2D MX2 were transferred and lithographic fabricated into MTJ devices with MX2 sandwiched within two ferromagnetic material layers. The magnetoresistance of the MTJs were studied at different temperatures.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2016
- Bibcode:
- 2016APS..MARH16013Y