Interfacial Control of Magnetic Properties at LaMnO3/LaNiO3 Interface
Abstract
The functional properties of oxide heterostructures ultimately rely on how the electronic and structural mismatches occurring at interfaces are accommodated by the chosen materials combination. We discuss here LaMnO3/LaNiO3 heterostructures, which display an intrinsic interface structural asymmetry depending on the growth sequence with the LaMnO3-on-LaNiO3 interface being sharper than the LaNiO3-on-LaMnO3 one, which exhibits 2-3 unit cells intermixing. Using a variety of synchrotron-based techniques, we show that the degree of intermixing at the monolayer scale allows interface-driven properties such as charge transfer and the induced magnetic moment in the nickelate layer to be controlled. Further, our results demonstrate that the magnetic state of strained LaMnO3 thin films dramatically depends on interface reconstructions.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2016
- Bibcode:
- 2016APS..MARE19002G