Silicon-nitride photonic circuits interfaced with monolayer MoS2

Monolayers of transition metal dichalcogenides exhibit interesting low-dimensional opto-electronic phenomena and large optical interactions. Harnessing these features for modulating light requires interfacing these monolayer semiconductors with photonic devices. Here, we show the integration of monolayer molybdenum disulphide (MoS₂) with silicon nitride ring microresonators using a visco-elastic layer transfer. Cavity transmission is used to measure the coupling of the monolayer evanescently coupled to the ring resonator. A linear absorption coefficient of 850 dB/cm is observed in this geometry, which is larger than that of graphene and black phosphorus with the same thickness. These assembly methods can be applied to a diverse catalog of monolayer materials for assembling hybrid optoelectronic devices over a wide spectral range.

This work is supported by the DOE-BES (DE-SC0012130), ISEN, and the Center for Nanoscale Materials, DOE-BES (DE-AC02-06CH11357). N.P.S. is an Alfred P. Sloan Research Fellow.