Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition
Abstract
The integration of a high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to its highest oxidation ability among the rare-earth elements, and various oxidation methods (atmospheric, and high-pressure O2 and ozone annealing) were applied to the Y metal buffer layer. By optimizing the oxidation conditions of the top-gate insulator, we successfully improved the capacitance of the top gate Y2O3 insulator and demonstrated a large I on/I off ratio for bilayer graphene under an external electric field.
- Publication:
-
Applied Physics Express
- Pub Date:
- December 2016
- DOI:
- 10.7567/APEX.9.125101
- arXiv:
- arXiv:1610.09857
- Bibcode:
- 2016APExp...9l5101T
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Appl. Phys. Express, 2016, 9, 125101