Epitaxial growth of monolayer MoSe2 on GaAs
Abstract
We realized 1-4 monolayer MoSe2 films on Se-terminated GaAs (111)B 2-in. substrates by molecular beam epitaxy. Atomically flat GaAs wafers were prepared by the migration-enhanced epitaxy method, and MoSe2 layers were successfully grown on Se-terminated GaAs (111)B surfaces with layer-number control over the entire wafer area. The obtained MoSe2 crystal is well aligned on the GaAs (111)B surface. The quasi-van der Waals gap formed between a Se-terminated GaAs (111)B surface and MoSe2 was directly observed with a scanning transmission electron microscope. All A1g Raman peaks from 93 points on 2-in. monolayer MoSe2 are distributed within 0.25 cm-1, indicating excellent spatial uniformity.
- Publication:
-
Applied Physics Express
- Pub Date:
- November 2016
- DOI:
- 10.7567/APEX.9.115501
- Bibcode:
- 2016APExp...9k5501O