Towards Faster InP Photonic Crystal All-Optical-Gates
Abstract
We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.
- Publication:
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arXiv e-prints
- Pub Date:
- June 2015
- DOI:
- 10.48550/arXiv.1506.01404
- arXiv:
- arXiv:1506.01404
- Bibcode:
- 2015arXiv150601404M
- Keywords:
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- Physics - Optics
- E-Print:
- 4 pages, 4 figures