Optical properties of two-dimensional gallium chalcogenide films
Abstract
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2015
- DOI:
- 10.48550/arXiv.1501.02214
- arXiv:
- arXiv:1501.02214
- Bibcode:
- 2015arXiv150102214D
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 2D Materials, 2 (3), 035010 (2015)