Ultrasound-induced nitride formation on the surface of single-crystalline GaAs in cryogenic fluid
Abstract
We have developed and successfully used a new method for structuring semiconductor surfaces that is based on the phenomenon of cavitation excited by focused ultrasound in a liquid medium. In this work, the cavitation impact of ultrasound at a frequency of ∼1 MHz and a power density of ∼15 W/cm2 on the surface of single-crystalline (001) GaAs in liquid nitrogen led to the formation of a submicron-sized relief of rippled and concentric structures with a height of up to 300 nm. Data of Raman spectroscopy and energy-dispersive X-ray spectroscopy showed the formation of GaAs1 - x N x surface compound with a nitrogen content of 5-7%.
- Publication:
-
Technical Physics Letters
- Pub Date:
- February 2015
- DOI:
- 10.1134/S1063785015020248
- Bibcode:
- 2015TePhL..41..164S