Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs
Abstract
- Publication:
-
Semiconductors
- Pub Date:
- June 2015
- DOI:
- 10.1134/S1063782615060056
- Bibcode:
- 2015Semic..49..827B