Dual color longwave InAs/GaSb type-II strained layer superlattice detectors
Abstract
We report on the design, growth, fabrication and characterization of dual-band (long-/long-wave infrared) type-II InAs/GaSb strained layer superlattice (T2SL) detectors with pBp architecture. Under operating the bias of -200 mV and +100 mV, quantum efficiencies of 37% (∼11 μm band) and 25% (∼9 μm band) were realized, respectively. To reduce the dark current in a dual-band T2SL detector, the effect of a "restoration" chemical etch treatment and ZnTe passivation on device performance were investigated.
- Publication:
-
Infrared Physics and Technology
- Pub Date:
- May 2015
- DOI:
- 10.1016/j.infrared.2014.09.027
- Bibcode:
- 2015InPhT..70...93P
- Keywords:
-
- Molecular beam epitaxy;
- Infrared detectors;
- Superlattice;
- pBp detector;
- Dual-band detector
