Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- text{g}_{mathrm {m}} Method
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- June 2015
- DOI:
- 10.1109/LED.2015.2419277
- Bibcode:
- 2015IEDL...36..561J