94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 2015
- DOI:
- 10.1109/LED.2014.2367093
- Bibcode:
- 2015IEDL...36...17M