Electrical characterization and transport model of n-gallium nitride nanowires
Abstract
The transport data of n-doped gallium-nitride self-assembled nanowires grown by metal-organic vapor-phase-epitaxy are determined. The wire diameter varies from 0.4 μm to 1.6 μm while the length was up to 50 μm. Optical lithography and lift-off were used to form Ti/Au multiple contacts to the nanowires for transmission line measurements. A specific contact resistance of ρC = 1.74 × 10-7 Ω cm2 and a nanowire resistivity of ρNW = 2.27 × 10-3 Ω cm could be determined. Electrical conductivity measurements were carried out and a model of the wire resistance as a function of the nanowire radius and the charge carrier concentration was developed. Using this model, the magnitude of the doping level of the n-GaN nanowires is determined. Based on this data, a dopant concentration of the GaN wires of about n = 1020 cm-3 has been investigated.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2015
- DOI:
- 10.1063/1.4929439
- Bibcode:
- 2015ApPhL.107h2103B