Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate
Abstract
We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N2H4.H2O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N2H4.H2O concentration. The result revealed that N2H4.H2O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N2H4 on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2015
- DOI:
- 10.1063/1.4913702
- Bibcode:
- 2015ApPhL.106i1602C