High-mobility transparent thin-film transistors with ZnSnLiO channel layer prepared by radio frequency magnetron sputtering
Abstract
We have fabricated transparent thin-film transistors with ZnSnLiO as active layers deposited by radio frequency magnetron sputtering at room temperature. The TFTs structure used in this study was a staggered bottom-gate, which consists of SiO2 as a gate insulator and heavily doped p-type Si(1 1 1) as a gate electrode. In order to optimize the performance of the ZnSnLiO thin-film transistors, the thermal annealing is investigated. We find that appropriate annealing temperature is very beneficial for the ZnSnLiO TFTs, and when the annealing temperature is 500 °C, the transistor exhibited the high field-effect mobility of 45.1 cm2/V s and a large Ion/off ratio of 6.0 × 107.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- March 2015
- DOI:
- 10.1007/s00339-014-8936-8
- Bibcode:
- 2015ApPhA.118.1535W
- Keywords:
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- Active Layer;
- Threshold Voltage;
- Gate Voltage;
- Gate Insulator;
- Drain Voltage