Discrete energy bands in bulk semiconductors
Abstract
Bulk semiconductors typically have continuous valence and conduction bands. Discrete energy levels and bands have been sought after for various applications. For instance, discrete energy levels existing in semiconductor nanocrystals, or quantum does (QDs) have been proposed as a mechanism to suppress hot carrier thermalization and to enhance carrier multiplication in QD solar cells. Impurity bands in the band gap have been introduced for intermediate-band solar cells and for efficient visible light absorption and photocatalysis. In this talk, we show by first principles calculations that, in a multinary compound, a combination of large electronegativity difference between different cations (anions) and large nearest-neighbor distances in cation (anion) sublattices can lead to the splitting of the conduction (valence) band, resulting in several discrete and narrow energy bands separated by large energy gaps. We also discuss applications that may benefit from such electronic structure.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2015
- Bibcode:
- 2015APS..MARA15015D