Influence of Ga content on structure and anomalous Hall effect of Fe1-xGax thin films on GaSb(100)
Abstract
The Fe-Ga alloys have recently attracted great interests because they exhibited ferromagnetic properties with high Curie temperature, high saturation magnetization and unique magnetostriction properties which are promising to real applications such as actuators, acoustic sensors, torque sensors, and positioning devices in particular for micro and nano-electromechanical systems and the integrated magnetostrictive devices. Recently, electrical spin injection from Fe0.5Ga0.5 produces an electron spin polarization above 70% on GaAs(001). However, the out-of-plane saturation field and magnetization decrease rapidly with Ga content. The Fe1-xGax thin films (x =0.4,0.5) have been grown on GaSb(100) substrate using MBE. An epitaxial film with bcc α-Fe crystal structure (A2) was observed in Fe60Ga40 film, while an impure Fe3Ga phase with DO3 structure appeared in Fe0.5Ga0.5 film. The saturated magnetizations are 570emu/cm3 and 180emu/cm3 and the coercivities are 170 and 364Oe at room temperature for Fe0.6Ga0.4 and Fe0.5Ga0.5, respectively. A hysteresis trend in Hall resistance vs. magnetic field was observed for Fe0.5Ga0 . 5 film. However, there is a weak hysteresis in Fe0.4Ga0.6 film.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2015
- Bibcode:
- 2015APS..MAR.H1187N