β-Radiation-induced decrease of adhesion in AlN/Si structure
Abstract
We have studied the effect of low-intensity ( I ∼ 1.2 × 105 cm-2 s-1) β radiation on the exfoliation of thin amorphous AlN films (with thicknesses on the order of 100 nm) from (100)-oriented silicon substrate as a result of scratching with a Berkovich pyramid at a linearly increasing load. It is established that AlN film beta-irradiated to a fluence of f = 2.16 × 1010 cm-2 exfoliates at about 10% lower load, while the lateral force acting upon the indenter decreases by about 40%. The obtained results can be used for improving the bonding technology and must be taken into account in assessment of the reliability of thin-film structures subjected to (intentional or accidental) electron irradiation.
- Publication:
-
Technical Physics Letters
- Pub Date:
- October 2014
- DOI:
- 10.1134/S1063785014100216
- Bibcode:
- 2014TePhL..40..887G