On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs2 semiconductors
Abstract
- Publication:
-
Semiconductors
- Pub Date:
- July 2014
- DOI:
- 10.1134/S1063782614070069
- Bibcode:
- 2014Semic..48..839G