Photoelectric activity of structural defects of a single crystal of the ferroelectric-semiconductor TlInS2: La
Abstract
Photoinduced current transient spectroscopy has been used in studying deep-level defects of the ferroelectric-semiconductor TlInS2. The specific features of defect detection in the lanthanum-doped and undoped single crystals have been compared. The explanation of the decrease in the photoelectric activity of defects in the doped sample has been proposed.
- Publication:
-
Physics of the Solid State
- Pub Date:
- August 2014
- DOI:
- 10.1134/S1063783414080216
- Bibcode:
- 2014PhSS...56.1605O
- Keywords:
-
- Lanthanum;
- Deep Level Transient Spectroscopy;
- Dope Crystal;
- Majority Charge Carrier;
- Undoped Crystal