Magnetic tunnel junctions with single-layer-graphene tunnel barriers
Abstract
We report on the fabrication and characterization of magnetic tunnel junctions consisting of a single layer of graphene as the tunnel barrier, sandwiched between two metallic ferromagnetic electrodes. We employ a fabrication process chosen to minimize oxidation of the electrode materials at the ferromagnet/graphene interfaces. The devices have low resistance-area products of 1.5-6 Ω μm2, with low-temperature magnetoresistances of 1.5-3.4%. The temperature and bias dependencies of the resistance confirm that transport is dominated by tunneling processes rather than by any unintended pinholes.
- Publication:
-
Physical Review B
- Pub Date:
- May 2014
- DOI:
- 10.1103/PhysRevB.89.184418
- Bibcode:
- 2014PhRvB..89r4418L
- Keywords:
-
- 85.75.Dd;
- 73.40.Gk;
- 72.80.Vp;
- Magnetic memory using magnetic tunnel junctions;
- Tunneling