Rutile TiO2 active-channel thin-film transistor using rapid thermal annealing
Abstract
TiO2 active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO2 as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO2 films annealed at temperatures above 500 °C changed from an amorphous to a rutile phase. The TFT with a TiO2 semiconductor annealed at 600 °C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 × 105, and an electron mobility of 0.014 cm2/Vs. Moreover, the potential for manipulating TiO2-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.
- Publication:
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Journal of Korean Physical Society
- Pub Date:
- October 2014
- DOI:
- 10.3938/jkps.65.1118
- Bibcode:
- 2014JKPS...65.1118K