Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeO_x Interfacial Layer Formed by In Situ Desorption
Abstract
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 2014
- DOI:
- 10.1109/LED.2014.2310636
- Bibcode:
- 2014IEDL...35..509L