Silicon-germanium nanostructures with high germanium concentration
Abstract
The impact of nucleation conditions on the quality of epitaxial layers of germanium and GeSi alloys containing a high Ge mole fraction grown on (100) silicon substrates using electron-beam epitaxy is considered. The GexS1-x/Ge superlattices are grown on a GeySi1-y (x > y) relaxed buffer layer. X-ray diffractometry, atomic force microscopy and Auger spectroscopy are the main techniques used to study the properties of the grown structures.
- Publication:
-
Bulletin of the Russian Academy of Sciences, Physics
- Pub Date:
- January 2014
- DOI:
- 10.3103/S1062873814010158
- Bibcode:
- 2014BRASP..78...29S
- Keywords:
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- Germanium;
- Antimony;
- Buffer Layer;
- Epitaxial Layer;
- Reflection High Energy Electron Diffraction