Anti-Stokes luminescence in the light of second order perturbation theory
Abstract
Anti-Stokes photoluminescence is measured in high-quality GaAs quantum wells. The primary pathway for interband optical absorption and hence emission under subbandgap photoexcitation is the optical phonon-mediated second-order electric dipole transition. This conclusion is drawn from the remarkable agreement between predictions of second-order perturbation calculation and the measured intensity of anti-Stokes photoluminescence, both as function of the detuning wavelength and temperature. The results are of direct relevance to laser cooling of solids where phonon-assisted upconversion is a necessary condition.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2014
- DOI:
- 10.1063/1.4901075
- Bibcode:
- 2014ApPhL.105s1102B